4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8USSpecifications Film: 4H SiC (0001) Film target thickness: 4. 3 microns with (thickness acceptation range) + 10% Film target doping layer: 1. 4E17 cc with (doping acceptation range) +0% 30% Conductive Type P type with Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom Substrate: 4H SiC (0001) Prime grade Off axis: miscut 8. 0 + 0. 5 degree Prime Grade: with FWHM 20 arc

Tungsten (W)

bcaf-co14 is a pre-cut LiCoO2 coated cathode electrode with a diameter of 14 mm for CR20XX coin cell battery R&D and split testing cells

Net weight:13

Split cover for easy tube replacement

Tungsten coil heater with the S type thermocouple is inserted to the bottom of alumina crucible for precise temperature measurement and control

4 alligator clamps (Two small for voltage and two big for current) compatible with other vendor's testing system  (Pic

MTI supplies high quality hot pressed SiC cutting blades with 6" diameter x 0

Two 1/4 BSPP Male-to-Male Couplers

The full diamond sintered blade is suitable for low-speed cutting ( under 1000 RPM) of oxide single crystals or any brittle crystals

mso-style-noshow:yes

from damage and contamination during shipping and storing

375" (1000 mm) Max