SKU:6868648229
4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1USSpecifications: Silicon Wafer Type: N P doped Orientation: (100) Size: 4'' dia Thickness: 500 550 um Grade: Prime Flates: 2 SEMI STD on Axis 0 degree off Resistivity: 1 10 ohm. cm Backside: Etch Particles: < 50 @ >0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers
ID: 16 mm
Material: Stainless Steel Felt Sheet
Input Voltage: 0 - 35 VAC 50/50Hz single phase
True density: 3
Tungsten coil heater and alumina crucible for high-temperature evaporation up to 1300 ºC
Digital display Digital display the speed in RPM/Hz
Optional Quick disconnect flange with KF50 vacuum port can be easily adapted to magnetic fluid seal
Package: sold in 20 pcs per box
Centrifugal acceleration: 37 g
optoelectronics and other microelectronics devices
Note: These empty cylindrical cells are pre-clamped with the cap only and WITHOUT Cathode and Anode
Pumping of dust
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Your 4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US orders ship within 1-2 business days.
Delivery Options:
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- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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