SKU:8894762456
Al2O3 - Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP - ALC50D05C2
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
Al2O3 - Sapphire Wafer, C-plane (0001), 2"dia x 0.5mm 2SP - ALC50D05C2Features: Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001]( + 0. 3 Deg) with Standard Flat Diameter: 2" + 0. 3mm Thickness: 500um + 25 um Major Flat: A axis[11 20]+ 0. 2o Surface Finish: Front sides: Epi polished Ra<0. 5nm (by AFM) Back side: Epi polished , <0. 5nm(by AFM) TTV: < 10um Polished surface: Two side epi polished by special CMP
CIP - Cold Isostatic Press
Click the video below to see how to heat seal the tab onto the pouch cell case after the welding:
alumina fiber must be used to fill the gap between the refractory liner and crucible
Purity> 99
71 Array (Capacity): 14*15=200
The press with rectangular plates (70x58mm) is available upon request at an extra cost
Operating Temperature 1200ºC Application Notes Please load sample directly into the quartz tube
which provides the heavy-duty structure for vacuum
Note: NRTL certification is not necessary due to 24VDC safe device
Power Mill/Mixer & Dispersing
Materials Case and cap are made of Nickel plated A3 steel
Monocrystalline Al2O3 Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
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