Al2O3 - Sapphire Wafer <0001> 2"dia x 0.43mm 1SP - ALC50D043C1

Al2O3 - Sapphire Wafer <0001> 2"dia x 0.43mm 1SP - ALC50D043C1Features: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001] off M plane(1 100) 0. 2o+ 0. 1o Diameter: 50. 8mm + 0. 1mm Thickness: 430um + 15 um Major Flat: A axis[11 20]+ 0. 2o Major Flat Length: 16mm + 1. 0mm Surface Finish: Front side: Epi polished , Ra< 0. 3 nm(by AFM); Back side: Fine ground, Ra= 0. 4 1. 2 um TTV: <= 7um Bow:<= 10 um WARP<=

Solvents and chemicals used for electrospinning may be poisonous

sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch

Center to Center distance of the two sides is 20mm

Make sure to inspect for defect(s) thoroughly before use

5x10-6 (/ oC)

Tungsten coil heater with the S type thermocouple is inserted to the bottom of alumina crucible for precise temperature measurement and control

please see IC Tray & Plastic Box below

Jars and balls are available at an extra cost

Mcdanel strongly recommends keeping ramp rate less than 100oC/ hour at 400 - 1700 oC range

Handcrafted from the finest agate stone with shining polished grinding surfaces

Impurity:       MgO < 0

Calibration Certificate by MTI is available at extra cost