SKU:86867948840
4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 umSpecifications Film: 4H SiC (0001) Film target thickness: 11 um with (thickness acceptation range) + 10% Conductive Type P type with Carrier concentration: (0. 3~ 1. 9)E16 cc Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom Substrate: 4H SiC (0001) Prime grade Off axis: miscut 4. 0 + 0. 5 degree Prime Grade: with FWHM 20 arc second OF orientation: parallel {10 10} + 5
see polymer battery with tab:
94mm Flatness = 0
D: 1
OTF-1200X-SVN is a splittable vertical tube furnace without a processing tube for DIY a tubular reactor up to 2" and 1200oC working temperature
Tungsten coil heater with the S type thermocouple is inserted to the bottom of alumina crucible for precise temperature measurement and control
Strong and tough for cutting and dicing any brittle crystals
Fit EQ-OTF-1200X-80
Sold by three pieces
Operating current: 6 A
Optional Syringe Pump
Use anti-rust oil after the operation and store it in a dry place to avoid rusting
Pumping of dust
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